FGP10N60UNDF

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Manufacturer part number:FGP10N60UNDF

Manufacturer:ON Semiconductor

Description:FGP10N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGP10N60UNDF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	139W
Number of Elements	1
Element Configuration	Single
Power Dissipation	139W
Input Type	Standard
Turn On Delay Time	8.1 ns
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	55 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	37.7 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Turn On Time	15.4 ns
Test Condition	400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 10A
Turn Off Time-Nom (toff)	89.3 ns
IGBT Type	NPT
Gate Charge	37nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	8ns/52.2ns
Switching Energy	150μJ (on), 50μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8.5V
Fall Time-Max (tf)	24.8ns
Height	16.51mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free