STH3N150-2

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STH3N150-2

Manufacturer part number:STH3N150-2

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 1500V 2.5A H2PAK-2

Case Package:SOT-23

Datasheet:STH3N150-2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab) Variant
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	H2PAK-2-8159712
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	STH3N
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	939pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	29.3nC @ 10V
Rise Time	47ns
Drain to Source Voltage (Vdss)	1500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	61 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	9Ohm
Drain to Source Breakdown Voltage	1.5kV
Avalanche Energy Rating (Eas)	450 mJ
Max Junction Temperature (Tj)	150°C
Height	5mm
Length	10.4mm
Width	15.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant