STI12N65M5

new-10%

Manufacturer part number:STI12N65M5

Manufacturer:STMicroelectronics

Description:MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh

Case Package:SOT-23

Datasheet:STI12N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STI12N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Turn On Delay Time	22.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	430m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	17.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	15.6 ns
Turn-Off Delay Time	15.6 ns
Continuous Drain Current (ID)	8.5A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	150 mJ
Height	9.35mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant