STL130N8F7

new-10%

Manufacturer part number:STL130N8F7

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.6m Ω @ 13A, 10V ±20V 6340pF @ 40V 96nC @ 10V 8-PowerVDFN

Case Package:SOT-23

Datasheet:STL130N8F7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	DeepGATE™, STripFET™ VII
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	3.6mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Base Part Number	STL130
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	2
Power Dissipation-Max	135W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6340pF @ 40V
Current - Continuous Drain (Id) @ 25°C	130A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	123A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Pulsed Drain Current-Max (IDM)	560A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free