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STN1NK60Z

STN1NK60Z

STN1NK60Z

STMicroelectronics

STN1NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STN1NK60Z Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 15Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 250mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN1N
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 5.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 94pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 1.9mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.447306 $0.447306
10 $0.421987 $4.21987
100 $0.398101 $39.8101
500 $0.375567 $187.7835
1000 $0.354308 $354.308
STN1NK60Z Product Details
STN1NK60Z Applications

? Switching applications

All features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
ESD improved capability
Zener-protected

STN1NK60Z Discription

STN1NK60Z is a N-channel Zener protection power MOSFET developed by STMicroelectronics SuperMESH semiconductor technology, and are realized by optimizing the layout of the mature ribbon power grid gate of STMicroelectronics.

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