STN1NK60Z

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STN1NK60Z

Manufacturer part number:STN1NK60Z

Manufacturer:STMicroelectronics

Description:STN1NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STN1NK60Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	15Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	250mA
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STN1N
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Case Connection	DRAIN
Turn On Delay Time	5.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	94pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Tc
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	300mA
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.25A
Drain to Source Breakdown Voltage	600V
Max Junction Temperature (Tj)	150°C
Height	1.9mm
Length	6.5mm
Width	3.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free