STN93003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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STN93003 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Max Power Dissipation
1.6W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN93
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.6W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-400V
Max Collector Current
-1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 350mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 500mA
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
1.5A
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
-10V
hFE Min
16
Max Junction Temperature (Tj)
150°C
Height
1.9mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.25478
$0.25478
2,000
$0.23446
$0.46892
5,000
$0.22091
$1.10455
10,000
$0.20737
$2.0737
25,000
$0.20511
$5.12775
STN93003 Product Details
STN93003 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 16 @ 350mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 500mA.With the emitter base voltage set at -10V, an efficient operation can be achieved.The breakdown input voltage is 400V volts.Maximum collector currents can be below -1.5A volts.
STN93003 Features
the DC current gain for this device is 16 @ 350mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 100mA, 500mA the emitter base voltage is kept at -10V
STN93003 Applications
There are a lot of STMicroelectronics STN93003 applications of single BJT transistors.