2SC4614T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SC4614T-AN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
3-NMP
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
1.5A
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.26000
$0.26
500
$0.2574
$128.7
1000
$0.2548
$254.8
1500
$0.2522
$378.3
2000
$0.2496
$499.2
2500
$0.247
$617.5
2SC4614T-AN Product Details
2SC4614T-AN Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This product comes in a 3-NMP device package from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SC4614T-AN Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 450mV @ 50mA, 500mA the supplier device package of 3-NMP
2SC4614T-AN Applications
There are a lot of Rochester Electronics, LLC 2SC4614T-AN applications of single BJT transistors.