ZXTP4003GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP4003GTA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 200mV
Current - Collector Cutoff (Max)
50nA ICBO
Collector Emitter Breakdown Voltage
100V
Max Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-1A
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.784192
$1.784192
10
$1.683200
$16.832
100
$1.587925
$158.7925
500
$1.498042
$749.021
1000
$1.413247
$1413.247
ZXTP4003GTA Product Details
ZXTP4003GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 200mV DC current gain.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZXTP4003GTA Features
the DC current gain for this device is 100 @ 150mA 200mV the emitter base voltage is kept at -7V
ZXTP4003GTA Applications
There are a lot of Diodes Incorporated ZXTP4003GTA applications of single BJT transistors.