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ZXTP4003GTA

ZXTP4003GTA

ZXTP4003GTA

Diodes Incorporated

ZXTP4003GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP4003GTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 200mV
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 100V
Max Breakdown Voltage 100V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -1A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.784192 $1.784192
10 $1.683200 $16.832
100 $1.587925 $158.7925
500 $1.498042 $749.021
1000 $1.413247 $1413.247
ZXTP4003GTA Product Details

ZXTP4003GTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 200mV DC current gain.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ZXTP4003GTA Features


the DC current gain for this device is 100 @ 150mA 200mV
the emitter base voltage is kept at -7V

ZXTP4003GTA Applications


There are a lot of Diodes Incorporated ZXTP4003GTA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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