2SCR552PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR552PT100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
280MHz
Max Breakdown Voltage
30V
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.819469
$1.819469
10
$1.716480
$17.1648
100
$1.619321
$161.9321
500
$1.527661
$763.8305
1000
$1.441190
$1441.19
2SCR552PT100 Product Details
2SCR552PT100 Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SCR552PT100 Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 400mV @ 50mA, 1A a transition frequency of 280MHz
2SCR552PT100 Applications
There are a lot of ROHM Semiconductor 2SCR552PT100 applications of single BJT transistors.