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STP27N3LH5

STP27N3LH5

STP27N3LH5

STMicroelectronics

STP27N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

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STP27N3LH5 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ V
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 20mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP27N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 27A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 50 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STP27N3LH5 Product Details

STP27N3LH5 N-Channel MOSFET Description


The STP27N3LH5 is one of the first 650 V automotive power MOSFETs in TO-247, and it's suited for hard-switching and high-current topologies. This STripFETTMV Power MOSFET technology is one of the most recent advancements, which has been specifically engineered to provide extremely low on-state resistance while simultaneously giving one of the finest figures of merit in the industry (FOM).



STP27N3LH5 N-Channel MOSFET Features


100% avalanche tested

Standard threshold drive

Low gate drive power losses

High avalanche ruggedness

Very low switching gate charge

Extremely low on-resistance RDS(on)

RDS(on)* Qgindustry benchmark



STP27N3LH5 N-Channel MOSFET Applications


Wheelchair

Buck Converters

VRM Applications

IAR AND EAS Parameters

Android and iOS

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