Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STP28NM50N

STP28NM50N

STP28NM50N

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 158m Ω @ 10.5A, 10V ±25V 1735pF @ 25V 50nC @ 10V TO-220-3

SOT-23

STP28NM50N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Series MDmesh™ II
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 158mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP28N
Pin Count3
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation90W
Turn On Delay Time13.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 158m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time19ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 84A
Height 15.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1256 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.03000$7.03
50$5.72980$286.49
100$5.25680$525.68
500$4.33440$2167.2

STP28NM50N Product Details

STP28NM50N Description


STP28NM50N belongs to the family of N-channel MDmesh? II power MOSFETs developed by STMicroelectronics. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for high-efficiency converters.



STP28NM50N Features


  • Improved vertical structure

  • Low on-state resistance

  • Low gate input resistance

  • Supplied in the TO-247 package

  • Low input capacitance and gate charge



STP28NM50N Applications


  • Switching applications


Get Subscriber

Enter Your Email Address, Get the Latest News