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STP36NF06L

STP36NF06L

STP36NF06L

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 15A, 10V ±18V 660pF @ 25V 17nC @ 5V TO-220-3

SOT-23

STP36NF06L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 32mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Base Part Number STP36N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±18V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 225 mJ
Height 9.15mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.62000 $1.62
50 $1.29360 $64.68
100 $1.13190 $113.19
500 $0.87780 $438.9
1,000 $0.69300 $0.693
2,500 $0.64680 $1.2936
5,000 $0.61446 $3.0723
STP36NF06L Product Details

STP36NF06L Description

This Power MOSFET is the latest development of STMicroelectronic's unique “Single Feature Size?”strip-based process. The resulting transistor shows an extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing

reproducibility.


STP36NF06L Features

Exceptional dv/dt capability

100% avalanche tested

Low threshold drive


STP36NF06L Applications

Switching application


Related Part Number

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