IRF730STRRPBF

new-10%

Manufacturer part number:IRF730STRRPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 400V 5.5A D2PAK

Case Package:SOT-23

Datasheet:IRF730STRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 74W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	5.5A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	1Ohm
Drain to Source Breakdown Voltage	400V
Pulsed Drain Current-Max (IDM)	22A
Avalanche Energy Rating (Eas)	290 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant