FDB035AN06A0

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FDB035AN06A0

Manufacturer part number:FDB035AN06A0

Manufacturer:ON Semiconductor

Description:FDB035AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDB035AN06A0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.5MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	80A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	93ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	625 mJ
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free