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SI1402DH-T1-GE3

SI1402DH-T1-GE3

SI1402DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 2.7A SOT363

SOT-23

SI1402DH-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 111 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 950mW Ta
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 77m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 12V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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