STQ3NK50ZR-AP

new-10%

Manufacturer part number:STQ3NK50ZR-AP

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 500MA TO-92

Case Package:SOT-23

Datasheet:STQ3NK50ZR-AP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STQ3
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	500mA Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	500mA
Drain Current-Max (Abs) (ID)	0.5A
Pulsed Drain Current-Max (IDM)	2A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	ROHS3 Compliant