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SUA70090E-E3

SUA70090E-E3

SUA70090E-E3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 9.3m Ω @ 20A, 10V ±20V 1950pF @ 50V 50nC @ 10V 100V TO-220-3 Full Pack

SOT-23

SUA70090E-E3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series ThunderFET®
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 35.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 50V
Current - Continuous Drain (Id) @ 25°C 42.8A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 42.8A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0093Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 80 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.990065 $5.990065
10 $5.651005 $56.51005
100 $5.331137 $533.1137
500 $5.029374 $2514.687
1000 $4.744693 $4744.693
SUA70090E-E3 Product Details

SUA70090E-E3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 1950pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 42.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 120A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.

SUA70090E-E3 Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 42.8A
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)


SUA70090E-E3 Applications


There are a lot of Vishay Siliconix
SUA70090E-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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