STS4DPF20L

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Manufacturer part number:STS4DPF20L

Manufacturer:STMicroelectronics

Description:STS4DPF20L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STS4DPF20L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	80mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-4A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STS4D
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	25 ns
Power - Max	1.6W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	35ns
Fall Time (Typ)	35 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	16A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.25mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free