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STS5PF30L

STS5PF30L

STS5PF30L

STMicroelectronics

STS5PF30L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STS5PF30L Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS5P
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 20A
Height 1.65mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
STS5PF30L Product Details

STS5PF30L     Description


 This power MOSFET is the latest development of the unique "single feature size" strip process of STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong avalanche characteristics and less critical alignment steps, so it has significant manufacturing repeatability.

 

STS5PF30L     Features


■ Conduction losses reduced

■ Switching losses reduced

■ Low threshold drive

■ Standard outline for easy automated surface

mount assembly

 

STS5PF30L     Applications


■ Switching application

 

 

 





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