STW13NK80Z

new-10%

Manufacturer part number:STW13NK80Z

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 800V 12A TO-247

Case Package:SOT-23

Datasheet:STW13NK80Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	12A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW13N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.65Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	48A
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free