STW30NM60ND

new-10%

Manufacturer part number:STW30NM60ND

Manufacturer:STMicroelectronics

Description:STW30NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW30NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	FDmesh™ II
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	130mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW30N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Voltage	600V
Power Dissipation-Max	190W Tc
Element Configuration	Single
Current	34A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 50V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	900 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free