SI2315BDS-T1-E3

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SI2315BDS-T1-E3

Manufacturer part number:SI2315BDS-T1-E3

Manufacturer:Vishay Siliconix

Description:Transistor: P-MOSFET; unipolar; -12V; -3A; 0.75W; SOT23

Case Package:SOT-23

Datasheet:SI2315BDS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	50mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Voltage	12V
Power Dissipation-Max	750mW Ta
Element Configuration	Single
Current	3A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750mW
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	50m Ω @ 3.85A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	715pF @ 6V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	-3A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	-12V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-900 mV
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free