STW7NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW7NK90Z Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2Ohm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Current Rating
5.8A
Base Part Number
STW7N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.8A Tc
Gate Charge (Qg) (Max) @ Vgs
60.5nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
2.9A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
900V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.12000
$4.12
30
$3.35800
$100.74
120
$3.08075
$369.69
510
$2.54016
$1295.4816
STW7NK90Z Product Details
STW7NK90Z Description
The STW7NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of a well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.