STY30NK90Z

new-10%

Manufacturer part number:STY30NK90Z

Manufacturer:STMicroelectronics

Description:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH

Case Package:SOT-23

Datasheet:STY30NK90Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	26A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STY30N
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	490nC @ 10V
Rise Time	59ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	250 ns
Continuous Drain Current (ID)	26A
Threshold Voltage	3.75V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.26Ohm
Drain to Source Breakdown Voltage	900V
Avalanche Energy Rating (Eas)	500 mJ
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free