BC337-40 B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC337-40 B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.078431
$0.078431
500
$0.057670
$28.835
1000
$0.048058
$48.058
2000
$0.044090
$88.18
5000
$0.041206
$206.03
10000
$0.038331
$383.31
15000
$0.037070
$556.05
50000
$0.036451
$1822.55
BC337-40 B1G Product Details
BC337-40 B1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.This product comes in a TO-92 device package from the supplier.The device exhibits a collector-emitter breakdown at 45V.
BC337-40 B1G Features
the DC current gain for this device is 250 @ 100mA 5V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of TO-92
BC337-40 B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC337-40 B1G applications of single BJT transistors.