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BC548B A1G

  • BC548B A1G
  • BC548B A1G

BC548B A1G

BC548B A1G

Taiwan Semiconductor Corporation

BC548B A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC548B A1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Tape & Box (TB)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.514448 $0.514448
10 $0.485328 $4.85328
100 $0.457857 $45.7857
500 $0.431941 $215.9705
1000 $0.407491 $407.491
BC548B A1G Product Details

BC548B A1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.The product comes in the supplier device package of TO-92.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC548B A1G Features


the DC current gain for this device is 200 @ 2mA 5V
the supplier device package of TO-92

BC548B A1G Applications


There are a lot of Taiwan Semiconductor Corporation BC548B A1G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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