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2SC2859-Y(TE85L,F)

2SC2859-Y(TE85L,F)

2SC2859-Y(TE85L,F)

Toshiba Semiconductor and Storage

Trans GP BJT NPN 30V 0.5A 3-Pin S-Mini T/R

SOT-23

2SC2859-Y(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package S-Mini
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Max Power Dissipation 150mW
Frequency 300MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 150mW
Power - Max 150mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 500mA
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 30V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
Radiation Hardening No
RoHS Status RoHS Compliant

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