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BC550A B1G

BC550A B1G

BC550A B1G

Taiwan Semiconductor Corporation

BC550A B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC550A B1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.03184 $0.1592
BC550A B1G Product Details

BC550A B1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BC550A B1G Features


the DC current gain for this device is 110 @ 2mA 5V
the supplier device package of TO-92

BC550A B1G Applications


There are a lot of Taiwan Semiconductor Corporation BC550A B1G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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