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BC550A B1G

BC550A B1G

BC550A B1G

Taiwan Semiconductor Corporation

BC550A B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC550A B1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC550A B1G Product Details

BC550A B1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BC550A B1G Features


the DC current gain for this device is 110 @ 2mA 5V
the supplier device package of TO-92

BC550A B1G Applications


There are a lot of Taiwan Semiconductor Corporation BC550A B1G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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