BC550A B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC550A B1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.03184
$0.1592
BC550A B1G Product Details
BC550A B1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC550A B1G Features
the DC current gain for this device is 110 @ 2mA 5V the supplier device package of TO-92
BC550A B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC550A B1G applications of single BJT transistors.