TSC497CX RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC497CX RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
75MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.470000
$0.47
10
$0.443396
$4.43396
100
$0.418298
$41.8298
500
$0.394621
$197.3105
1000
$0.372284
$372.284
TSC497CX RFG Product Details
TSC497CX RFG Overview
This device has a DC current gain of 100 @ 1mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 25mA, 250mA.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
TSC497CX RFG Features
the DC current gain for this device is 100 @ 1mA 10V the vce saturation(Max) is 300mV @ 25mA, 250mA
TSC497CX RFG Applications
There are a lot of Taiwan Semiconductor Corporation TSC497CX RFG applications of single BJT transistors.