TSC873CW RPG

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Manufacturer part number:TSC873CW RPG

Manufacturer:Taiwan Semiconductor Corporation

Description:TSC873CW RPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

Case Package:SOT-23

Datasheet:TSC873CW RPG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Operating Temperature	150°C TJ
Packaging	Digi-Reel®
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 250mA 10V
Current - Collector Cutoff (Max)	1mA
Vce Saturation (Max) @ Ib, Ic	1V @ 250mA, 1A
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1A
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$2.371602	$2.371602
10	$2.237360	$22.3736
100	$2.110717	$211.0717
500	$1.991242	$995.621
1000	$1.878531	$1878.531

TSC873CW RPG Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 250mA 10V DC current gain.When VCE saturation is 1V @ 250mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Device displays Collector Emitter Breakdown (400V maximal voltage).