FZT1147ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT1147ATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-12V
Max Power Dissipation
2.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Case Connection
COLLECTOR
Gain Bandwidth Product
115MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 5A
Collector Emitter Breakdown Voltage
12V
Transition Frequency
115MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$15.676960
$15.67696
10
$14.789585
$147.89585
100
$13.952439
$1395.2439
500
$13.162678
$6581.339
1000
$12.417621
$12417.621
FZT1147ATA Product Details
FZT1147ATA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 5A.Continuous collector voltages should be kept at -5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.A transition frequency of 115MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 5A volts is possible.
FZT1147ATA Features
the DC current gain for this device is 270 @ 10mA 2V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 400mV @ 50mA, 5A the emitter base voltage is kept at 5V the current rating of this device is -5A a transition frequency of 115MHz
FZT1147ATA Applications
There are a lot of Diodes Incorporated FZT1147ATA applications of single BJT transistors.