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FZT1147ATA

FZT1147ATA

FZT1147ATA

Diodes Incorporated

FZT1147ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT1147ATA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Frequency 115MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Case Connection COLLECTOR
Gain Bandwidth Product 115MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 5A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 115MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.676960 $15.67696
10 $14.789585 $147.89585
100 $13.952439 $1395.2439
500 $13.162678 $6581.339
1000 $12.417621 $12417.621
FZT1147ATA Product Details

FZT1147ATA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 5A.Continuous collector voltages should be kept at -5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.A transition frequency of 115MHz is present in the part.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 5A volts is possible.

FZT1147ATA Features


the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
a transition frequency of 115MHz

FZT1147ATA Applications


There are a lot of Diodes Incorporated FZT1147ATA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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