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2SD2098T100R

2SD2098T100R

2SD2098T100R

ROHM Semiconductor

2SD2098T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2098T100R Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2001
JESD-609 Code e2
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating5A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2098
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Collector Emitter Breakdown Voltage20V
Transition Frequency 150MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
VCEsat-Max 1 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9936 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.528840$0.52884
10$0.498906$4.98906
100$0.470666$47.0666
500$0.444024$222.012
1000$0.418891$418.891

2SD2098T100R Product Details

2SD2098T100R Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 4A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.

2SD2098T100R Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 150MHz

2SD2098T100R Applications


There are a lot of ROHM Semiconductor 2SD2098T100R applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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