Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SB1216S-E

  • 2SB1216S-E
  • 2SB1216S-E

2SB1216S-E

2SB1216S-E

ON Semiconductor

2SB1216S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1216S-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position SINGLE
Base Part Number 2SB1216
Pin Count 3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 130MHz
Frequency - Transition 130MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) -6V
hFE Min 70
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.323918 $0.323918
10 $0.305583 $3.05583
100 $0.288286 $28.8286
500 $0.271967 $135.9835
1000 $0.256574 $256.574
2SB1216S-E Product Details

2SB1216S-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.The part has a transition frequency of 130MHz.When collector current reaches its maximum, it can reach 4A volts.

2SB1216S-E Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz

2SB1216S-E Applications


There are a lot of ON Semiconductor 2SB1216S-E applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Related Part Number

KSC5504DTTU
Rochester Electronics, LLC
KSC5504DTTU
$0 $/piece
2SD2098T100R
ROHM Semiconductor
2SD2098T100R
$0 $/piece
BCP52-10TF
Nexperia USA Inc.
BCP52-10TF
$0 $/piece
FZT558TA
Diodes Incorporated
FZT558TA
$0 $/piece
MPS4124RLRAG
Rochester Electronics, LLC
MPS4124RLRAG
$0 $/piece
FZT1147ATA
Diodes Incorporated
FZT1147ATA
$0 $/piece
2SAR340QTR
ROHM Semiconductor
2SAR340QTR
$0 $/piece
BCP5116H6433XTMA1
Infineon Technologies
BCP5116H6433XTMA1
$0 $/piece
PBHV8215Z,115
Nexperia USA Inc.
PBHV8215Z,115
$0 $/piece
2N333A
Microsemi Corporation
2N333A
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News