2SB1216S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.The part has a transition frequency of 130MHz.When collector current reaches its maximum, it can reach 4A volts.
2SB1216S-E Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1216S-E Applications
There are a lot of ON Semiconductor 2SB1216S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
