IRF7507TRPBF   Description

  The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. The new Micro8 package covers only half the footprint of the standard SO-8, making it the smallest footprint available in the SOIC outline. This makes Micro8 an ideal device for applications with limited space on printed circuit boards. The ultra-thin shape of the Micro8 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards.

IRF7507TRPBF    Features

 Generation V Technology

 Ultra Low On-Resistance

 Dual N and P Channel MOSFET

 Very Small SOIC Package

 Low Profile (<1.1mm)

 Available in Tape & Reel

 Fast Switching

 IRF7507TRPBF   Applications

limited space on printed circuit boards