NTJD5121NT2G

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Manufacturer part number:NTJD5121NT2G

Manufacturer:ON Semiconductor

Description:NTJD5121NT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD5121NT2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Max Power Dissipation	250mW
Terminal Form	GULL WING
Base Part Number	NTJD5121N
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	22 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	295mA
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free