TSM80N1R2CI C0G

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Manufacturer part number:TSM80N1R2CI C0G

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET N-CH 800V 5.5A ITO220

Case Package:SOT-23

Datasheet:TSM80N1R2CI C0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	25W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	685pF @ 100V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	19.4nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	5.5A
Pulsed Drain Current-Max (IDM)	16.5A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	121 mJ
RoHS Status	ROHS3 Compliant