CSD17559Q5T

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CSD17559Q5T

Manufacturer part number:CSD17559Q5T

Manufacturer:Texas Instruments

Description:This 30 V, 0.95 m, 56 mm SON NexFET power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Case Package:SOT-23

Datasheet:CSD17559Q5T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17559
Number of Elements	1
Power Dissipation-Max	3.2W Ta 96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.15m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 15V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	51nC @ 4.5V
Rise Time	41ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	257A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain-source On Resistance-Max	0.0015Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	541 mJ
Feedback Cap-Max (Crss)	113 pF
Height	1.05mm
Length	5mm
Width	6mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead