CSD17570Q5B

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CSD17570Q5B

Manufacturer part number:CSD17570Q5B

Manufacturer:Texas Instruments

Description:CSD17570Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD17570Q5B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17570
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.69m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	121nC @ 4.5V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	144 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	53A
Drain-source On Resistance-Max	0.00092Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	360A
Avalanche Energy Rating (Eas)	450 mJ
Length	5mm
Width	6mm
Thickness	950μm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead