CSD18532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD18532Q5B Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD18532
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.2W Ta 156W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.2W
Case Connection
DRAIN
Turn On Delay Time
5.8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5070pF @ 30V
Current - Continuous Drain (Id) @ 25°C
100A Ta
Gate Charge (Qg) (Max) @ Vgs
58nC @ 10V
Rise Time
7.2ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.1 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
23A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0043Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
320 mJ
Max Junction Temperature (Tj)
150°C
Height
1.05mm
Length
5mm
Width
6mm
Thickness
950μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:2879 items
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Unit Price
Ext. Price
CSD18532Q5B Product Details
CSD18532Q5B Description
CSD18532Q5B emerges as an N-Channel NexFET? power MOSFET with ultra-low Qg and Qgd, and low thermal resistance. As a result, it is well suited for motor control, DC-DC conversion, synchronous rectification, and isolated converter primary-side switch.
CSD18532Q5B Features
Logic level
Ultra-low Qg and Qgd
Low-thermal resistance
Available in the Q5B package
CSD18532Q5B Applications
Motor control
DC-DC conversion
Secondary side synchronous rectifier
Isolated converter primary side switch
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