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CSD18543Q3AT

CSD18543Q3AT

CSD18543Q3AT

Texas Instruments

60V N-CHANNEL NEXFET POWER MOSF

SOT-23

CSD18543Q3AT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Base Part Number CSD18543
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 66W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.6m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 30V
Current - Continuous Drain (Id) @ 25°C 12A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 55 mJ
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 6.2 pF
Height 900μm
Length 3.3mm
Width 3.3mm
Thickness 800μm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $0.57420 $143.55
500 $0.50896 $254.48
750 $0.44632 $334.74
1,250 $0.40455 $0.40455

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