CSD18543Q3AT

new-10%

Manufacturer part number:CSD18543Q3AT

Manufacturer:Texas Instruments

Description:60V N-CHANNEL NEXFET POWER MOSF

Case Package:SOT-23

Datasheet:CSD18543Q3AT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Base Part Number	CSD18543
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	66W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15.6m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 30V
Current - Continuous Drain (Id) @ 25°C	12A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	55 mJ
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	6.2 pF
Height	900μm
Length	3.3mm
Width	3.3mm
Thickness	800μm
RoHS Status	ROHS3 Compliant