CSD19537Q3

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Manufacturer part number:CSD19537Q3

Manufacturer:Texas Instruments

Description:CSD19537Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD19537Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Base Part Number	CSD19537
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.8W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	9.7A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	55 mJ
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3.3mm
Width	3.3mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead