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VN0300L-G-P002

VN0300L-G-P002

VN0300L-G-P002

Microchip Technology

MOSFET,N-CHANNEL ENHANCEMENT-MODE,30V,1.2 Ohm3 TO-92RVT/R

SOT-23

VN0300L-G-P002 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Current - Continuous Drain (Id) @ 25°C 640mA Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 640mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.64A
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 50 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.88580 $1.7716

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