CSD75207W15 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
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CSD75207W15 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
9-UFBGA, DSBGA
Number of Pins
9
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Max Power Dissipation
700mW
Terminal Position
BOTTOM
Terminal Form
BALL
Base Part Number
CSD75207
Operating Mode
-0.8
Turn On Delay Time
12.8 ns
FET Type
2 P-Channel (Dual) Common Source
Rds On (Max) @ Id, Vgs
162m Ω @ 1A, 1.8V
Vgs(th) (Max) @ Id
1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
595pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
3.7nC @ 4.5V
Rise Time
8.6ns
Fall Time (Typ)
16 ns
Turn-Off Delay Time
32.1 ns
Continuous Drain Current (ID)
3.9A
Gate to Source Voltage (Vgs)
-6V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
625μm
Length
1.75mm
Width
1.75mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
CSD75207W15 Product Details
CSD75207W15 Description
CSD75207W15 devices want to provide the lowest on-resistance and gate charge in the smallest configuration and have good thermal characteristics at ultra-low voltage. Low resistance, small footprint and low profile make the deviceIdeal choice for limited battery-powered space.Apply. The device also obtained US patents of 7952145,7420247,7235845 and 6600182.