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MMSTA56T146

MMSTA56T146

MMSTA56T146

ROHM Semiconductor

MMSTA56T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMSTA56T146 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number STA56
Pin Count3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element ConfigurationSingle
Power - Max 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -4V
hFE Min 100
VCEsat-Max 0.25 V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15850 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.335000$0.335
10$0.316038$3.16038
100$0.298149$29.8149
500$0.281272$140.636
1000$0.265351$265.351

MMSTA56T146 Product Details

MMSTA56T146 Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at -4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can be broken down at a voltage of 80V volts.The maximum collector current is 500mA volts.

MMSTA56T146 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz

MMSTA56T146 Applications


There are a lot of ROHM Semiconductor MMSTA56T146 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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