NSM6056MT1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The part has a transition frequency of 250MHz.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 600mA volts is possible.

NSM6056MT1G Features

the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

NSM6056MT1G Applications

There are a lot of ON Semiconductor NSM6056MT1G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter