2SA2154CT-GR,L3F Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 50V volts.In extreme cases, the collector current can be as low as 100mA volts.

2SA2154CT-GR,L3F Features

the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SA2154CT-GR,L3F Applications

There are a lot of Toshiba Semiconductor and Storage 2SA2154CT-GR,L3F applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting