2N5550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5550 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.041520
$0.04152
500
$0.030529
$15.2645
1000
$0.025441
$25.441
2000
$0.023341
$46.682
5000
$0.021814
$109.07
10000
$0.020292
$202.92
15000
$0.019624
$294.36
50000
$0.019296
$964.8
2N5550 Product Details
2N5550 Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As you can see, the part has a transition frequency of 100MHz.The device exhibits a collector-emitter breakdown at 140V.
2N5550 Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 250mV @ 5mA, 50mA a transition frequency of 100MHz
2N5550 Applications
There are a lot of Rochester Electronics, LLC 2N5550 applications of single BJT transistors.