2SC5359-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC5359-O(Q) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3PL
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
180W
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
180W
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
230V
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Height
26mm
Length
20.5mm
Width
5.2mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.57000
$2.57
500
$2.5443
$1272.15
1000
$2.5186
$2518.6
1500
$2.4929
$3739.35
2000
$2.4672
$4934.4
2500
$2.4415
$6103.75
2SC5359-O(Q) Product Details
2SC5359-O(Q) Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Maximum collector currents can be below 15A volts.
2SC5359-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V
2SC5359-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SC5359-O(Q) applications of single BJT transistors.