2SC5359-O(Q) Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Maximum collector currents can be below 15A volts.

2SC5359-O(Q) Features

the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V

2SC5359-O(Q) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC5359-O(Q) applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter