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GT10G131(TE12L,Q)

  • GT10G131(TE12L,Q)
  • GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

SOT-23

GT10G131(TE12L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number GT10
Input Type Standard
Power - Max 1W
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Voltage - Collector Emitter Breakdown (Max) 400V
Vce(on) (Max) @ Vge, Ic 2.3V @ 4V, 200A
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 3.1μs/2μs
Radiation Hardening No
RoHS Status RoHS Compliant

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