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GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

SOT-23

GT8G133(TE12L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Supplier Device Package 8-TSSOP
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 600mW
Input Type Standard
Power - Max 600mW
Collector Emitter Voltage (VCEO) 2.9V
Collector Emitter Breakdown Voltage 400V
Voltage - Collector Emitter Breakdown (Max) 400V
Vce(on) (Max) @ Vge, Ic 2.9V @ 4V, 150A
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 1.7μs/2μs
RoHS Status RoHS Compliant

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